Our Authors Books

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Name: Electronic devices of millimeter and submillimeter ranges on the basis of nanotechnologies

Authors: Zorenko A.V., Chaika E.V., Oleinik V.F., Bulgach V.L., Valyaev V.V., Mironov D.V.

State university of information-communication technologies, State Enterprise Research Institute "Orion", Kyiv, Ukraine

Annotation: The book deals with a research of electronic devices of the latest generation, including Gunn diodes, IMPATT diodes, field-effect transistors with Schottky barrier taking into account the recent achievements based on nanotechnology in improving the operating frequency of oscillation and extend the functionality of devices with the goal of creating new classes of devices for modern systems of radar, communication and instrumentation technology. It considers the issuses of simulation, calculation of performance in a wide range of parameters, the methods of engineering calculation and examples of experimental implementation of existing devices.

Achievable performances of devices based on the matrix tip-shaped cathodes with field emission are investigated. The diode and triode structures based on cathodes of high-alloy conductors, cathodes coated with diamond like carbon film, cathodes with a variety of quantum wells are examined.

The methods of designing oscillators of video pulses with subnanosecond duration for ultra-wideband systems and subsurface locations.

Release year: 2004

Publisher: Kiev: State university of information-communication technologies

УДК 621.385.12

ISBN 966-96313-1-2

Name: Semiconductor devices of the millimeter wave.

Authors: L.V. Kasatkin, V.E. Chaika – 319 pp.: ill.

State Enterprise Research Institute "Orion", Kyiv, Ukraine.

Abstract: This monograph describes methods of calculation and design of sources of electromagnetic oscillations on semiconductor diodes and transistors in the millimeter wavelength range. The physical principles of action of various classes of semiconductor diodes and transistors are considered and amplitude-frequency characteristics, necessary for calculation, design and determination of the dynamic characteristics of sources of electromagnetic oscillations are given.

There are available methods of calculation and optimization of frequency-stable and broadband oscillating, amplifying, synchronized and frequency-multiplying systems; the issues of the power combining of active elements in branched and bridge electrodynamic systems, in summing resonators and waveguides in the quasi-optical spatial developed systems are discussed.

The publication is intended for engineers and researchers working in the field of design and operation of semiconductor devices and microwave devices, as well for undergraduate and graduate students specializing in this area.

Year of release: 2006

Publisher: Sevastopol: "Veber"

УДК 621.382.2.029.64

ISBN 966-7968-95-2

Name: Electro vacuum devices of millimeter wavelength range.

Authors: Kasatkin L.V., Rapoport G.N., Rukin V.P., Eremka V.D., Naumenko V.D., Miroshnichenko V.S. – 252 pp.: ill.

State Enterprise Research Institute "Orion", Kyiv, Ukraine,

Institute of Radio physics and electronics, named after A. Ya. Usikov, National Academy of Sciences of Ukraine

Abstract: This monograph presents the main results of theoretical and experimental studies, technological and experimental development in the field of creation of electro vacuum devices (EVD) in the range of millimeter-wave (MMW). In focus is the presentation of design-technological features, a search of optimal technical solutions and operation modes of vacuum microwave devices of O-type, magnetrons, gyro-devices, oscillators of diffraction radiation of the MMW range. Effective technical solutions implemented in different classes of EVD of range of the MMW are sequentially discussed in the book. The data of achieved level of parameters and characteristics of these devices, their application in modern electronic systems and equipment, as well as the main prospects for their further development are given.

The publication is intended for engineers and researchers working in the field of development, design and operation of electro vacuum microwave devices, and can be useful for postgraduates and students specializing in the field of science and technology.

Year of release: 2007

Publisher: Sevastopol: "Veber"

УДК 621.385.6

ISBN 978-966-335-079-0

Name: Microwave gyro-devices: operation principles and design features.

Authors: L. V. Kasatkin, G. N. Rapoport. – 134 pp. ill.

State Enterprise Research Institute "Orion", Kyiv, Ukraine

Abstract: Devices with transverse oscillatory motion of electrons and interaction with unmoderated waves are currently the most powerful vacuum devices in the millimeter wavelength range. First operating devices of this class, implemented as backward wave oscillators with the design based on the two-wire line with trochoidal electron beam was created in 1957 with the output power level of the units of watts in the centimeter wavelength range. Over the past 50 years as a result of active theoretical and experimental research, design and technological developments it was found and implemented innovative solutions to create high-frequency and optoelectronic systems as the basis for constructing new classes of powerful EVP of pulse and continuous modes with the curvilinear flow of electrons without use of slow high-frequency systems – gyro devices oscillators and amplifiers in frequency ranges from tens to hundreds of gigahertz. Levels of achieved continuous power are more than units of megawatt in a specified frequency region. The operation principles, methods of improving the power and range characteristics, features of designing the basic units of gyro-devices.

Year of release: 2008

Publisher: Sevastopol: "Veber"

УДК 621.385.6

ISBN 978-966-335-186-5; ISBN 978-966-335-187-2 (CD)

Name: Phases of implementation in the technology of semiconductor devices and VLSI..

Authors: Boltovets M.S., Ageev О.А., Belyaev А.Е., Konakova R.V., Milenin V.V., Pilipenko V.А. Under the general editorship of R.V. Konakova. – 392 p.

National academy of science of Ukraine, V. Lashkaryov Institute of Semiconductor Physics.

State Enterprise Research Institute "Orion", Kyiv, Ukraine,

Technological Institute of southern Federal University, Russia,

НПО "Integral", Belarus

Annotation: This collective monograph contains theoretical and experimental results of using a number of silicides, nitrides and borides of refractory metals in the technology of forming contacts for semiconductor devices and VLSI. The authors, based on own research and literature data, show on specific examples the promise of using the phases of implementation (TiNx, TiBx, ZrBx, NbNx) to create contacts to high energy-gap semiconductors (GaP, SiC, GaN). A significant place in the monograph is paid to the application of silicides in VLSI and for the formation of ohmic contacts to silicon carbide, as well as interfacial interactions in the multilayer contact systems to Si, GaAs and InP instrument structures.

The monograph is intended for wide circle of specialists in the field of physics and technology of semiconductor devices, as well as students and postgraduates of relevant specialties.

Release year: 2008

Publisher: Kharkov: НТК "Institute of mono crystals"

ISBN 966-02-2555-5 (series); ISBN 978-9666-02-4742-0

Name: Electronic and training facilities to improve safe aviation.

Authors: Rudik V.I. Guchenko N.I., Zubkov A.M., Kiselev V.K., Kovalev Is.D., Matuga V.M., Motsar A.I., Motsar P.I., Udovenko V.A., Khlopov G.I. Edited by G.I. Khlopov. – 192 pp.: ill.

Institute of Radiophysics and electronics named after A.Ya. Usikov, National Academy of Sciences of Ukraine; State Enterprise Research Institute "Orion", Kyiv, Ukraine

Abstract: The results of a comprehensive research as to the creation of electronic systems for safety improvement are presented.

On the basis of the mathematical modeling methods of aircraft flight dynamics and pilot behavior it is considered the development of training facilities for theoretical and practical training of crews as well for research of special, critical and supercritical flight regimes that allows the development of recommendations to come out of crisis situations. The methods of creation and synthesis of image of large spaces and surface, which is underlaying, including the use of "e-cards" and simulated night vision are given.

The results of complex researches on creation of coherent radar in short-wave part of the millimeter wave range to ensure round-the-clock and all-weather applications of aviation, including the creation of components for receiving and transmitting and antenna-feeder devices. The features of the propagation of millimeter waves in the ground layer of the troposphere, the properties of the dispersion by typical objects as well the results of development of methods for radar recognition of moving and stationary objects.

It can be used for scientists, specialists, teachers, postgraduates and students.

Release year: 2010

Publisher: Kharkov. "Tochka".

УДК 629.7.06:629.7.018

ISBN 978-966-8669-47-7

Name: Silicon carbide: technology, properties, application.

Authors: Boltovets N.S. Ageev O.A., Belyaev A.E., Kiselev V.S., Konakova R.V., Lebedev A.A., Milenin V.V., Okhrimenko O.V., Polyakov V.V., Svetlichnyi A.M., Cherednichenko D.I., edited by A. E. Belyaev, R. V. Konakova. – 532 pp.: ill.

National Academy of Science of Ukraine, Institute of Semiconductor Physics, named after V.E. Lashkaryov;

State Enterprise Research Institute "Orion", Kyiv, Ukraine;

Technological Institute of southern Federal University, Russia.

Abstract: This collective monograph contains theoretical and experimental results on the methods of growing single crystals and epitaxial SiC film, and silicon carbide ceramics. Based on own research and literature data, the authors with specific examples consider defect production in SiC, the role of dislocations in the degradation process of p–n junctions and Schottky diodes. Significant place in the monograph is focused to the issues of technology of silicon carbide device structures: oxidation of SiC and formation of ohmic and barrier contacts. Data of the structure and parameters of silicon microwave diodes are presented, and various applications of SiC and silicon carbide ceramics are considered.

The monograph is intended for a wide circle of specialists in the field of physics and technology of semiconductor materials and devices, as well as for students and postgraduates of relevant specialties.

Release year: 2010

Publisher: Kharkiv, ИСМА

ISBN 966-02-2555-5 (series); ISBN 978-966-02-5445-9

Name: Physico-Technological Aspects of degradation of Silicon microwave Diodes.

Authors: Boltovets N.S., Belyaev A.E., Venger E.F., Konakova R.V., Kudryk Ya.Ya., Milenin V.V., Milenin G.V. – 182 p.

National academy of science of Ukraine, V.Lashkaryov Institute of Semiconductor Physics.

State Enterprise Research Institute "Orion", Ukraine

Annotation: The monograph deals with the physical phenomena occurring in the metal-semiconductor junction layer and at microwave diode breakdown, as well as methodology of the catastrophe theory when predicting failures for silicon diodes and transistors. The methods of measurements of the parameters of ohmic and barrier contacts, as well as degradation in silicon microwave diodes related to the physico-chemical and structural properties of metal- semiconductor interfaces, quality of the initial semiconductor material and p-n junction perfection, are considered. The experimental data on the techniques of defect gettering in microwave diode structures, particular, the low-temperature and non-heating gettering processes that improve the parameters of semiconductor devices, are presented.

The monograph is intended for researchers and those engaged in development of microwave devices. It may be of use also to post-graduates and under-graduates specializing in corresponding areas.

Release year: 2011

Publisher: Kyiv, Akademperiodika

УДК 621.382.2

ISBN 978-966-360-176-2

 

Name: Diffusion Barriers in Ohmic contacts to Semiconductor Devices Structures: Technology, Properties, Application.

Chapter IV in "Advances in Materials Science Research".–50 p. v.12.

Authors: Boltovets N.S., Belyaev A.E., Konakova R.V., Kudryk Ya.Ya., Milenin V.V.

Annotation: The problem of development of solid-state microelectronic devices of increased reliability and resistance to active actions involves search for and use of such materials for contact metallization that exclude or reduce considerably the action of factors stemming from migration processes.

The attempts to solve the problem of stabilization and reliability of the parameters of contact systems as well as reduction of the area and depth of such systems by using conventional thermodynamic and kinetic approaches did not succeed. Another way turned out to be more promising. It involves formation in the contact structure of stabilizing layers, namely, diffusion barriers that are not products of interactions between phases of the contacting layers [21]. Just that approach makes it possible to make radically new versions of contact structures for semiconductor devices that are resistant to various extreme actions and have smaller sizes.

We present the results of our investigations of contact systems (with diffusion barriers made as amorphous TiBx films) to the device structures that are based on Si, GaAs, GaP, InP, SiC and GaN epitaxial films and are used when making microwave devices.

Release year: 2012

Publisher: Ed. Maryann C. Wythers. Nova Sci. Publ. Inc. New York

ISBN: 978-1-62100-045-7

Name: Physical diagnostic methods in micro- and nanoelectronics

Authors: Boltovets N.S., Belyaev A.E., Venger E.F., Volkov E.G., Kladko V.P., Konakova R.V., Kudryk Ya.Ya., Milenin V.V. Milenin G.V., Pilipenko V.A., Red'ko R.A., Sachenko A.V. Under the General editorship of A.E. Belyaev, R.V. Konakova. – 384 pp.: ill.

National academy of science of Ukraine, V. Lashkaryov Institute of Semiconductor Physics.

State Enterprise Research Institute "Orion", Kyiv, Ukraine,

НПО "Интеграл", Республика Беларусь

Annotation: This monograph contains material covering the underlying physical diagnostic techniques in micro- and nanoelectronics: methods of x-ray diffraction diagnostics of semiconductor materials and structures used in production of VLSI and a number of discrete semiconductor devices and semiconductor structures with quantum dots, quantum wells and super lattices; electronic microscopy methods; Auger-electron spectroscopy, XPS, ВИМС and of Rutherford backscattering, as well a range of probe techniques in the diagnosis of contact metallization and electrophysical parameters of semiconductor materials; thermophysical methods in the diagnostics of microwave diodes and LEDs.

Considerable attention is paid to the methods of mathematical modeling of the mechanisms of current transfer in contacts metal-semiconductor with a high dislocation density in the contact area of semiconductor and physics and static modeling of failures in the diagnostics of semiconductor devices.

For researchers and engineers involved in physical diagnostic techniques in micro- and nanoelectronics, as well as for a wide range of proficient in the field of physics and technology of VLSI and discrete semiconductor devices.

Release year: 2011

Publisher: Kharkiv, ИСМА

ISBN 966-02-2555-5 (series); ISBN 978-966-02-6350-8

Name: Bulk absorbers of microwave radiation for vacuum devices.

Author: V.I. Chasnyk

Annotation: Monograph presents experimental research of microwave absorption, dielectric properties and thermal conductivity in lossy materials based on aluminum nitride with addition of molybdenum, tungsten or silicon carbide. These materials for bulk absorbers are used in designing new vacuum devices: travelling wave tubes, klystrons and magnetrons.

The book is to be useful for engineers and scientists, working in a design of microwave vacuum electronic devices, as well as to students and post-graduate students of the above specialty.

Release year: 2014

Kyiv: EPC ALCON, – 70 p.

ISBN 978-966-8449-49-9

Name: Aluminum nitride based functional materials, prepared from nano/micron-sized powders via hot pressing/pressureless sintering: monograph.

Authors: І.P. Fecenko, М.М. Prokopiv, V.І. Chasnyk, О.М. Kaidash, G.С. Oliynyk, М.О. Kuzenkova.

Editor-in-chief: academician of NAS of Ukraine, Prof. M.V. Novikov, Dr. Phys.-Math Sci.

Monograph presents physical and chemical base of preparing aluminum nitride based materials by means of designing micro/macro structure and phase composition. The process of sintering in nitrogen at normal pressure, i.e. pressureless sintering, that allows preparing aluminum nitride based ceramics of complex shape and of certain physical and mechanical characteristics is given in detail.

The monograph is aimed at scientists and engineers in materials science, dealing with manufacturing single phase/composite materials, at students and post graduate students.

Release year: 2015

Kyiv: EPC ALCON, 2015 – 172 p.

ISBN 978-966-8449-53-6

Name: Physical-Technological Problems of Gallium Nitride Electronics

Authors: Belyaev A.E., Bessolov V.N., Boltovets N.S., Gilyaev Yu.V., Kladko V.P., Konakova R.V., Kuchuk A.V., Sachenko A.V., Sheremet V.N. Under the General editorship of A.E. Belyaev, R.V. Konakova. – 258 pp.; ill.

National academy of science of Ukraine, V. Lashkaryov Institute of Semiconductor Physics.

State Enterprise Research Institute "Orion", Kyiv, Ukraine

Abstract: The monograph presents the systematized and summarized results of the analysis of technology features of bulk gallium nitride layers on sapphire and silicon carbide substrates, and the results of physical and technological, modeling and theoretical studies of ohmic contacts to gallium nitride. For the first time it is considered in detail the temperature dependence of the specific contact resistance of ohmic contacts with high dislocation density in the contact region of gallium nitride

It is intended for scientists and engineers engaged in the problems of technology of gallium nitride and the production of devices based on them and also for postgraduate students and high school students.

Release year: 2016

Publisher: Kyiv, "Наукова думка"

ISBN 978-966-00-1508-1